Browsing byAuthorCheong, Byung-ki
Showing results 1 to 30 of 54
| Issue Date | Title | Author(s) |
|---|---|---|
| 2008 | A novel programming method to refresh a long-cycled phase change memory cell | Lee, Suyoun; Jeong, Jeung-Hyun; Lee, Taek Sung; Kim, Won Mok; Cheong, Byung-ki |
| 2011-05 | A Single Element Phase Change Memory | Lee, Sang-Hyeon; Kim, Moonkyung; Cheong, Byung-ki; Kim, Jooyeon; Lee, Jo-Won; Tiwari, Sandip |
| 2009-05 | A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling | Lee, Suyoun; Jeong, Jeung-hyun; Lee, Taek Sung; Kim, Won Mok; Cheong, Byung-ki |
| 2013-07 | A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt | Ahn, Hyung-Woo; Jeong, Doo Seok; Cheong, Byung-ki; Kim, Su-dong; Shin, Sang-Yeol; Lim, Hyungkwang; Kim, Donghwan; Lee, Suyoun |
| 2009-08-31 | A study on the temperature dependence of characteristics of phase change memory devices | Lee, Suyoun; Jeong, Doo Seok; Jeong, Jeung-hyun; Zhe, Wu; Park, Young-Wook; Ahn, Hyung-Woo; Kim, Mok; Cheong, Byung-ki |
| 2010-01-11 | A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 | Lee, Suyoun; Jeong, Doo Seok; Jeong, Jeung-hyun; Zhe, Wu; Park, Young-Wook; Ahn, Hyung-Woo; Cheong, Byung-ki |
| 2006-09-01 | An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode | Kang, Dae-Hwan; Kim, In Ho; Jeong, Jeung-hyun; Cheong, Byung-ki; Ahn, Dong-Ho; Lee, Dongbok; Kim, Hyun-Mi; Kim, Ki-Bum; Kim, Soo-Hyun |
| 2009-01-05 | Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials | Jeong, Jeung-hyun; Ahn, Hyung-Woo; Lee, Suyoun; Kim, Won Mok; Ha, Jae-Geun; Cheong, Byung-ki |
| 2014-04-14 | Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices | Seo, Juhee; Ahn, Hyung-Woo; Shin, Sang-yeol; Cheong, Byung-ki; Lee, Suyoun |
| 2016-11-25 | Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization | Choi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu |
| 2011-10-03 | Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe | Wu, Zhe; Zhang, Gang; Park, Youngwook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki |
| 2011-03 | Dc current transport behavior in amorphous GeSe films | Jeong, Doo Seok; Park, Goon-Ho; Lim, Hyungkwang; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki |
| 2009-05 | Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe | Lee, Suyoun; Jeong, Jeung-hyun; Wu, Zhe; Park, Young-Wook; Kim, Won Mok; Cheong, Byung-ki |
| 2013-07-22 | Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films | Ahn, Hyung-Woo; Jeong, Doo Seok; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun |
| 2013-07 | Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices | Kim, Su-Dong; Ahn, Hyung-Woo; Shin, Sang Yeol; Jeong, Doo Seok; Son, Seo Hee; Lee, Hosun; Cheong, Byung-ki; Shin, Dong Wook; Lee, Suyoun |
| 2006-03 | Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material | Cheong, Byung-ki; Kim, In Ho; Jung, Hanju; Lee, Taek Sung; Jeong, Jeung-hyun; Kang, Dae-Hwan; Kim, Won Mok; Ha, Jae-Geun |
| 2010-03 | Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron | Kim, Yong Hyun; Lee, Kyung Seok; Lee, Taek Sung; Cheong, Byung-ki; Seong, Tae-Yeon; Kim, Won Mok |
| 2017-11-13 | Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film | Choi, Min Sup; Cheong, Byung-ki; Ra, Chang Ho; Lee, Suyoun; Bae, Jee-Hwan; Lee, Sungwoo; Lee, Gun-Do; Yang, Cheol-Woong; Hone, James; Yoo, Won Jong |
| 2010-01 | Enhanced thermal efficiency for amorphization in nano-structured Ge2Sb2Te5-TiOx films | Lee, Dongbok; Kang, Dongmin; Kwon, Min-Ho; Jun, Hyun-Goo; Kim, Ki-Bum; Lyeo, Ho-Ki; Lee, Hyun-Suk; Cheong, Byung-ki |
| 2015-02-15 | EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se films | Choi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu |
| 2012-10 | Fast and scalable memory characteristics of Ge-doped SbTe phase change materials | Cheong, Byung-ki; Lee, Suyoun; Jeong, Jeung-hyun; Park, Sohee; Han, Seungwu; Wu, Zhe; Ahn, Dong-Ho |
| 2010-05-15 | First-principles calculations on the energetics of nitrogen-doped hexagonal Ge2Sb2Te5 | Kim, Sae-Jin; Choi, Jung-Hae; Lee, Seung-Cheol; Cheong, Byung-ki; Jeong, Doo Seok; Park, Chan |
| 2015-05 | High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layer | Liu, Xiaochi; Hwang, E. H.; Yoo, Won Jong; Lee, Suyoun; Cheong, Byung-ki |
| 2015-11 | High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD) | Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-ki; Kim, Jin-Sang; Lee, Suyoun |
| 2007-09 | High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solution | Ahn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki |
| 2022-11 | Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films | Shin, Sang Yeol; Lee, Suyeon; Cheong, Byung-ki; Choi, Yong Gyu |
| 2010-03-29 | Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature | Wu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki |
| 2012-07-31 | Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys | Kang, Tae Dong; Sim, Kyung Ik; Kim, Jae Hoon; Wu, Zhe; Cheong, Byung-ki; Lee, Hosun |
| 2011-03 | Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te Ratios | Kang, Tae Dong; Sirenko, Andrei; Park, Jun-Woo; Lee, Hyun Seok; Lee, Suyoun; Jeong, Jeung-hyun; Cheong, Byung-ki; Lee, Hosun |
| 2005-09 | Kinetic Characteristics of FCC to Hexagonal Transformation in (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) Chalcogenide Alloy for Phase Change Memory | Ahn, Dong-Ho; Kim, Hyun-Mi; Lee, Min-Hyun; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
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