Browsing byAuthorCheong, Byung-ki

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Showing results 1 to 30 of 54

Issue DateTitleAuthor(s)
2008A novel programming method to refresh a long-cycled phase change memory cellLee, Suyoun; Jeong, Jeung-Hyun; Lee, Taek Sung; Kim, Won Mok; Cheong, Byung-ki
2011-05A Single Element Phase Change MemoryLee, Sang-Hyeon; Kim, Moonkyung; Cheong, Byung-ki; Kim, Jooyeon; Lee, Jo-Won; Tiwari, Sandip
2009-05A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase CyclingLee, Suyoun; Jeong, Jeung-hyun; Lee, Taek Sung; Kim, Won Mok; Cheong, Byung-ki
2013-07A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/PtAhn, Hyung-Woo; Jeong, Doo Seok; Cheong, Byung-ki; Kim, Su-dong; Shin, Sang-Yeol; Lim, Hyungkwang; Kim, Donghwan; Lee, Suyoun
2009-08-31A study on the temperature dependence of characteristics of phase change memory devicesLee, Suyoun; Jeong, Doo Seok; Jeong, Jeung-hyun; Zhe, Wu; Park, Young-Wook; Ahn, Hyung-Woo; Kim, Mok; Cheong, Byung-ki
2010-01-11A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5Lee, Suyoun; Jeong, Doo Seok; Jeong, Jeung-hyun; Zhe, Wu; Park, Young-Wook; Ahn, Hyung-Woo; Cheong, Byung-ki
2006-09-01An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrodeKang, Dae-Hwan; Kim, In Ho; Jeong, Jeung-hyun; Cheong, Byung-ki; Ahn, Dong-Ho; Lee, Dongbok; Kim, Hyun-Mi; Kim, Ki-Bum; Kim, Soo-Hyun
2009-01-05Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materialsJeong, Jeung-hyun; Ahn, Hyung-Woo; Lee, Suyoun; Kim, Won Mok; Ha, Jae-Geun; Cheong, Byung-ki
2014-04-14Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devicesSeo, Juhee; Ahn, Hyung-Woo; Shin, Sang-yeol; Cheong, Byung-ki; Lee, Suyoun
2016-11-25Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallizationChoi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu
2011-10-03Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTeWu, Zhe; Zhang, Gang; Park, Youngwook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki
2011-03Dc current transport behavior in amorphous GeSe filmsJeong, Doo Seok; Park, Goon-Ho; Lim, Hyungkwang; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki
2009-05Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTeLee, Suyoun; Jeong, Jeung-hyun; Wu, Zhe; Park, Young-Wook; Kim, Won Mok; Cheong, Byung-ki
2013-07-22Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe filmsAhn, Hyung-Woo; Jeong, Doo Seok; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun
2013-07Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) DevicesKim, Su-Dong; Ahn, Hyung-Woo; Shin, Sang Yeol; Jeong, Doo Seok; Son, Seo Hee; Lee, Hosun; Cheong, Byung-ki; Shin, Dong Wook; Lee, Suyoun
2006-03Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory MaterialCheong, Byung-ki; Kim, In Ho; Jung, Hanju; Lee, Taek Sung; Jeong, Jeung-hyun; Kang, Dae-Hwan; Kim, Won Mok; Ha, Jae-Geun
2010-03Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetronKim, Yong Hyun; Lee, Kyung Seok; Lee, Taek Sung; Cheong, Byung-ki; Seong, Tae-Yeon; Kim, Won Mok
2017-11-13Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline FilmChoi, Min Sup; Cheong, Byung-ki; Ra, Chang Ho; Lee, Suyoun; Bae, Jee-Hwan; Lee, Sungwoo; Lee, Gun-Do; Yang, Cheol-Woong; Hone, James; Yoo, Won Jong
2010-01Enhanced thermal efficiency for amorphization in nano-structured Ge2Sb2Te5-TiOx filmsLee, Dongbok; Kang, Dongmin; Kwon, Min-Ho; Jun, Hyun-Goo; Kim, Ki-Bum; Lyeo, Ho-Ki; Lee, Hyun-Suk; Cheong, Byung-ki
2015-02-15EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se filmsChoi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu
2012-10Fast and scalable memory characteristics of Ge-doped SbTe phase change materialsCheong, Byung-ki; Lee, Suyoun; Jeong, Jeung-hyun; Park, Sohee; Han, Seungwu; Wu, Zhe; Ahn, Dong-Ho
2010-05-15First-principles calculations on the energetics of nitrogen-doped hexagonal Ge2Sb2Te5Kim, Sae-Jin; Choi, Jung-Hae; Lee, Seung-Cheol; Cheong, Byung-ki; Jeong, Doo Seok; Park, Chan
2015-05High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layerLiu, Xiaochi; Hwang, E. H.; Yoo, Won Jong; Lee, Suyoun; Cheong, Byung-ki
2015-11High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD)Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-ki; Kim, Jin-Sang; Lee, Suyoun
2007-09High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solutionAhn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki
2022-11Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin filmsShin, Sang Yeol; Lee, Suyeon; Cheong, Byung-ki; Choi, Yong Gyu
2010-03-29Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperatureWu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki
2012-07-31Infrared spectroscopic ellipsometry of Ge-doped SbTe alloysKang, Tae Dong; Sim, Kyung Ik; Kim, Jae Hoon; Wu, Zhe; Cheong, Byung-ki; Lee, Hosun
2011-03Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te RatiosKang, Tae Dong; Sirenko, Andrei; Park, Jun-Woo; Lee, Hyun Seok; Lee, Suyoun; Jeong, Jeung-hyun; Cheong, Byung-ki; Lee, Hosun
2005-09Kinetic Characteristics of FCC to Hexagonal Transformation in (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) Chalcogenide Alloy for Phase Change MemoryAhn, Dong-Ho; Kim, Hyun-Mi; Lee, Min-Hyun; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum