| 1994-01 | Annealing effects on the properties of TiW/WNx bilayer. | 김용태; D. J. Kim; C. S. Kwon; J. W. Park; 민석기 |
| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| 1996-01 | Nitrogen effects of Ta-Si-N diffusion barrier in Si/Cu metallization. | Kim Yong Tae; S. P. Jeong; D. J. Kim; J. W. Park; Min Suk-Ki |
| 1994-01 | Nitrogen implanted tungsten thin films for Cu diffusion barrier. | Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki |
| 1996-01 | Study of temperature dependent conductivity of Ta, Ta-Si-N thin films. | Kim Yong Tae; S. P. Jeong; D. J. Kim; H. N. Lee; Min Suk-Ki |
| - | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. | Kim Yong Tae; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi |
| 1995-01 | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. | 김용태; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi |
