Browsing byAuthorHeo, DC

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Showing results 1 to 11 of 11

Issue DateTitleAuthor(s)
2003-08Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dotsHeo, DC; Song, JD; Choi, WJ; Lee, JI; Jeong, JC; Han, IK
2003-07CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasersHeo, DC; Song, JD; Han, IK; Lee, JI; Jeong, JC; Kim, JM; Lee, YT
2003-06Effects of the linewidth enhancement factor on filamentation in 1.55 mu m broad-area laser diodesHeo, DC; Han, IK; Lee, JI; Jeong, JC; Cho, SH
2003-07Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxyHeo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC
2003-05-29High power broadband InGaAs/GaAs quantum dot superluminescent diodesHeo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK
2001-03Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodesHan, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M
2000-12Low frequency noise spectroscopy for Schottky contactsLee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC
2003-09Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodesHeo, DC; Han, IK; Lee, JI; Jeong, JC
2004-02-09Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxySong, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH
2004-11Study on superluminescent diodes using InGaAs-InAs chirped quantum dotsHan, IK; Heo, DC; Song, JD; Lee, JI
2002Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layerHan, IK; Heo, DC; Choi, WJ; Lee, JI