Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots

Abstract

Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 x 10(10) cm(-2). The output power and spectral width of the SLD using these three-stacked QDs are 0.9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.