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High power broadband InGaAs/GaAs quantum dot superluminescent diodes

Authors
Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK
Issue Date
2003-05-29
Publisher
IEE-INST ELEC ENG
Citation
ELECTRONICS LETTERS, v.39, no.11, pp.863 - 865
Abstract
The characteristics of superluminescent diodes (SLDs) using InGaAs quantum dot is presented. In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 run, respectively, covering the range 980-1060 nm.
Keywords
superluminescent diodes; quantum dots; High power; spectral bandwidth
ISSN
0013-5194
URI
https://pubs.kist.re.kr/handle/201004/138558
DOI
10.1049/el:20030519
Appears in Collections:
KIST Article > 2003
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