| - | A study on the optimal design of 600V GaN power MOSFET using Al2O3 gate oxide | Kim, Yong Tae; Ey Goo Kang; Ho Jung Chang |
| - | Characteristics of Er-Implanted GaN | Chang-Sik Son; Kim, Seong Il; Kim, Yong Tae; Akihiro Wakahara; Homero C. Lopez; Ho Jung Chang |
| - | Degradation behavior in the SrBi2Nb2O9/Si structures by hydrogen ambient annealing | Ik Soo Kim; Kim, Yong Tae; Kim, Seong Il; Ho Jung Chang; In-Hoon Choi |
| - | Electrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si Substrate | Ho Jung Chang; Kang Mo Suh; Park Ji Ho; Ho Sung Chang; Soon Chan Hong; Kim, Yong Tae; Makoto Ishida |
| - | Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET) | Sun Il Shim; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae; Ho Jung Chang; Jung Ho Park |
| - | Prepartion of field effect transistor with (Bi,La)Ti3O12 ferroelectric thin film gate | Kang Mo Suh; Ji Ho Park; Su Cheol Gong; Ho Jung Chang; Young Chul Chang; Sun Il Shim; Kim, Yong Tae |
