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A study on the optimal design of 600V GaN power MOSFET using Al2O3 gate oxide

Authors

Kim, Yong Tae; Ey Goo Kang; Ho Jung Chang

Citation

Asia Pacific Interdisciplinary Research Conf.2011, pp.18pp-51

Keywords

Optimal design; power MOS; GaN; 600V; Al2O3 gate oxide

URI

https://pubs.kist.re.kr/handle/201004/96800

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KIST Conference Paper > Others

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