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Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)

Authors

Sun Il Shim; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae; Ho Jung Chang; Jung Ho Park

Citation

The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Mate, pp.164

URI

https://pubs.kist.re.kr/handle/201004/105958

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KIST Conference Paper > Others

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