| 1987-06 | AN IMPROVED SYNTHESIS OF 2-SUBSTITUTED-PYRROLINES | KOH, D; PARK, SW; KIM, Y |
| 1994-08 | CARBON DOPING CHARACTERISTICS OF GAAS AND AL0.3GA0.7AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4 | KIM, SI; KIM, Y; KIM, MS; KIM, CK; MIN, SK; LEE, C |
| 1993-01 | CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESS | KIM, SI; EOM, KS; KIM, Y; KIM, MS; MIN, SK; LEE, C; KWAK, MH; MA, DS |
| 1995-02-01 | CROSS-SECTIONAL OBSERVATION OF NACLO STAIN-ETCHED AL0.5GA0.5AS/GAAS MULTILAYER BY ATOMIC-FORCE MICROSCOPY | KIM, HJ; KIM, JS; KIM, Y; KIM, MS; MIN, SK |
| 1990-03-01 | DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH |
| 1990-02-19 | DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING | CHO, HY; KIM, EK; KIM, Y; MIN, SK; YOON, JH; CHOH, SH |
| 1995-05 | DEPENDENCE OF PROPAGATION LOSS ON ETCHING DEPTH IN AL0.3GA0.7AS/GAAS AL0.3GA0.7AS STRIP-LOADED TYPE WAVE-GUIDES | PARK, KH; BYUN, YT; KIM, Y; KIM, SH; CHOI, SS; CHUNG, Y |
| 1995-10-15 | DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER | CHOI, WJ; LEE, S; KIM, Y; KIM, SK; LEE, JI; KANG, KN; PARK, N; PARK, HL; CHO, K |
| 1992-10 | DIFFUSION LIMITING MECHANISM IN SI-DELTA DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; MIN, SK; KIM, TW |
| 1991-02 | DISLOCATION-ACCELERATED DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC |
| 1992-12 | ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, TW; KIM, Y; KIM, MS; KIM, EK; MIN, SK |
| 1993-08 | ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, CC |
| 1994-03-01 | ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION | CHOI, WJ; LEE, JI; HAN, IK; KANG, KN; KIM, Y; PARK, HL; CHO, K |
| 1995-04-01 | ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING | CHOI, WJ; LEE, S; ZHANG, JM; KIM, Y; KIM, SK; LEE, JI; KANG, KN; CHO, K |
| 1995-11 | FACET EVOLUTION OF CCL4-DOPED AL0.5GA0.5AS/GAAS MULTILAYERS DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1993-12-20 | FACILE SYNTHESES AND MULTI-ORTHOFUNCTIONALIZATIONS OF TERTIARY BENZAMIDES | PAEK, K; KIM, K; KIM, Y |
| 1995-01 | GROWTH-BEHAVIOR ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
| 1993-12 | HALL-MOBILITY AND TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF CARBON-DOPED GAAS | KIM, SI; KIM, Y; LEE, MS; KIM, MS; MIN, SK; LEE, CC |
| 1993-08 | INHIBITORY EFFECTS OF HYDROLYZABLE TANNINS ON CA2+- ACTIVATED HYALURONIDASE | LEE, J; LEE, SH; MIN, KR; LEE, KS; RO, JS; RYU, JC; KIM, Y |
| 1993-05-01 | LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, C |
| 1995-01-01 | MAGNETOTRANSPORT AND ELECTRIC SUBBAND STUDIES OF SI-DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, TW; KIM, Y; MIN, SK |
| 1994-09-01 | MAGNETOTRANSPORT AND ELECTRON SUBBAND STUDIES OF EDGE DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS | KIM, TW; YOO, KH; LEE, KS; KIM, Y; MIN, SK; YOM, SS; LEE, SJ |
| 1995-01-19 | NEW TREE STRUCTURE WITH CONDITIONAL HEIGHT DIFFERENCE FOR WAVELET TRANSFORM IMAGE-CODING | KIM, Y; KIM, HG; PARK, YT |
| 1995-06-20 | ONE-POT SYNTHESES OF A CARCEPLEX, A HEMICARCEPLEX, AND A GATE-FUNCTIONALIZED HEMICARCEPLEX | PAEK, K; JOO, K; KIM, M; KIM, Y |
| 1995-07 | ORIGIN OF CRYSTALLOGRAPHIC TILT IN INGAAS/GAAS(001) HETEROSTRUCTURE | KANG, JM; SON, CS; KIM, MS; KIM, Y; MIN, SK; KIM, CS |
| 1990-11 | PREPARATION AND REACTIVITY OF (PHENYLSILATRANE)MANGANESE TRICARBONYL PERCHLORATE | LEE, YA; CHUNG, YK; KIM, Y; JEONG, JH |
| 1993-11-29 | PROPERTIES OF THE QUANTUM WIRES GROWN ON V-GROOVED AL0.3GA0.7AS/GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | LEE, MS; KIM, Y; KIM, MS; KIM, SI; MIN, SK; KIM, YD; NAHM, S |
| 1984-01 | RELATIVE STEREOCHEMISTRY OF THE A-RING OF PLANT BILE-PIGMENTS | SCHOENLEBER, RW; KIM, Y; RAPOPORT, H |
| 1990-09 | SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH |
| 1994-10 | STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF SI DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, TW; KIM, Y; Min, Suk Ki; LEE, JY; LEE, SJ |
