| 2003-02 | Analytic model for photo-response of p-channel MODFET'S | Kim, HJ; Han, I; Choi, WJ; Park, YJ; Cho, WJ; Lee, JI; Kim, DM; Zimmermann, J |
| 2003-10 | Biochemical characterizations reveal different properties between CDK4/cyclin d1 and CDK2/cyclin a | Kim, DM; Yang, K; Yang, BS |
| 2000-06 | Comparison of photoresponsive drain conduction and gate leakage in N-channel pseudomorphic HEMT and MESFET under electro-optical stimulations | Kim, DM; Kim, HJ; Lee, JI; Lee, YJ |
| 1998-03-15 | Effects of light on a P-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Kim, SH; Lee, JI; Kang, KN; Cho, K |
| 1999-02 | Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT | Kim, DM; Song, SH; Kim, HJ; Kang, KN |
| 1998-02-02 | High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Woo, DH; Kim, SI; Kim, SH; Lee, JI; Kang, KN; Cho, K |
| 2000-03 | Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations | Kim, DM; Song, SH; Baek, KH; Kim, DJ; Kim, HJ |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 1998-01-08 | Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET | Kim, HJ; Kim, SH; Lee, JI; Kang, KN; Kim, DM; Cho, K |
| 2002 | P-channel MODFET as an optoelectronic detector | Kim, HJ; Kim, DM; Han, IK; Choi, WJ; Zimmermann, J; Lee, J |
| 1999-05 | Parallel conduction and non-linear optoelectronic response of an n-channel pseudomorphic high electron mobility transistor | Kim, DM; Lim, GM; Kim, HJ |
| 2000 | Photodetection mechanism in p-channel pseudomorphic MODFET | Lee, J; Kim, HJ; Kim, DM; Zimmermann, J |
| 1998-01 | Photonic microwave characteristics and modeling of an Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterostructure pseudomorphic HEMT | Song, SH; Kim, DM; Kim, HJ; Kim, SH; Kang, KN; Nathan, MI |
