| 2008-01-30 | Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor | Kang, KyongTae; Kim, Il-Doo; Lim, Mi-Hwa; Kim, Ho-Gi; Hong, Jae-Min |
| 2011-01 | Characterization on Bandedge Electronic Structure of MgO Added Bi1.5Zn1.0Nb1.5O7 Gate Dielectrics for ZnO-Thin Film Transistors | Cho, Nam Gyu; Seo, Hyungtak; Kim, Dong Hun; Kim, Ho-Gi; Kim, Jinwoo; Kim, Il-Doo |
| 2009-09 | Electrochemical Properties of MnOx-RuO2 Nanofiber Mats Synthesized by Co-Electrospinning | Hyun, Tae-Seon; Kang, Ji-Eun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo |
| 2009-07 | Fabrication and gas sensing properties of hollow SnO2 hemispheres | Chang, Young-Eun; Youn, Doo-Young; Ankonina, Guy; Yang, Dae-Jin; Kim, Ho-Gi; Rothschild, Avner; Kim, Il-Doo |
| 2010-03-01 | Facile synthesis and electrochemical properties of conducting SrRuO3-RuO2 composite nanofibre mats | Hyun, Tae-Seon; Kim, Ho-Gi; Kim, Il-Doo |
| 2010-10 | Facile synthesis and electrochemical properties of RuO2 nanofibers with ionically conducting hydrous layer | Hyun, Tae-Seon; Tuller, Harry L.; Youn, Doo-Young; Kim, Ho-Gi; Kim, Il-Doo |
| 2010-11 | Facile Synthesis of Pt-Functionalized SnO2 Hollow Hemispheres and Their Gas Sensing Properties | Cho, Nam Gyu; Whitfield, George C.; Yang, Dae Jin; Kim, Ho-Gi; Tuller, Harry L.; Kim, Il-Doo |
| 2011-07-05 | Gas sensing properties of p-type hollow NiO hemispheres prepared by polymeric colloidal templating method | Cho, Nam Gyu; Hwang, In-Sung; Kim, Ho-Gi; Lee, Jong-Heun; Kim, Il-Doo |
| 2007-01-22 | High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates | Kang, KyongTae; Lim, Mi-Hwa; Kim, Ho-Gi; Kim, Il-Doo; Hong, Jae-Min |
| 2009-06 | High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers | Kim, Dong Hun; Choi, Seung-Hoon; Cho, Nam Gyu; Chang, YoungEun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo |
| 2009-04 | Highly Transparent InGaZnO4 Thin Film Transistors Using Indium-Doped ZnO Electrodes on Plastic Substrate | Kim, Dong Hun; Cho, Nam Gyu; Kim, Ho-Gi; Kim, Il-Doo |
| 2008-03-05 | Hollow TiO2 hemispheres obtained by colloidal templating for application in dye-sensitized solar cells | Yang, Su-Chul; Yang, Dae-Jin; Kim, Junkyung; Hong, Jae-Min; Kim, Ho-Gi; Kim, Il-Doo; Lee, Hyunjung |
| 2010-08 | InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator | Kim, Dong Hun; Seo, Hyungtak; Chung, Kwun-Bum; Cho, Nam Gyu; Kim, Ho-Gi; Kim, Il-Doo |
| 2006-12 | Low frequency and microwave performances of Ba0.6Sr0.4TiO3 films on atomic layer deposited TiO2/high resistivity Si substrates | Kim, Hyun-Suk; Kim, Il-Doo; Kim, Ki-Byoung; Yun, Tae-Soon; Lee, Jong-Chul; Tuller, Harry L.; Choi, Won-Youl; Kim, Ho-Gi |
| 2006-11-13 | Low leakage current-stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator - for low voltage ZnO thin film transistors | Lim, Mi-Hwa; Kang, KyongTae; Kim, Ho-Gi; Kim, Il-Doo; Choi, YongWoo; Tuller, Harry L. |
| 2008-07-21 | Low voltage operating InGaZnO4 thin film transistors using high-k MgO-Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate | Kim, Dong Hun; Cho, Nam Gyu; Kim, Ho-Gi; Kim, Hyun-Suk; Hong, Jae-Min; Kim, Il-Doo |
| 2010-08 | Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers | Kim, Dong Hun; Cho, Nam Gyu; Kim, Ho-Gi; Kim, Il-Doo |
| 2007-08 | New tunable microwave Ba0.6Sr0.4TiO3/MgO phase shifters using interdigital capacitors and slit-inductors | Yun, Tae-Soon; Kim, Hyun-Suk; Kim, Ki-Byoung; Kim, Il-Doo; Kim, Ho-Gi; Lee, Jong-Chu |
| 2006-07-31 | Orientation effect on microwave dielectric properties of Si-integrated Ba0.6Sr0.4TiO3 thin films for frequency agile devices | Kim, Hyun-Suk; Hyun, Tae-Seon; Kim, Ho-Gi; Kim, Il-Doo; Yun, Tae-Soon; Lee, Jong-Chul |
| 2006-07-10 | Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering | Kim, Il-Doo; Lim, Mi-Hwa; Kang, KyongTae; Kim, Ho-Gi; Choi, Si-Young |
| 2007-08 | Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers | Kim, Hyun-Suk; Hyun, Tae-Seon; Kim, Ho-Gi; Yun, Tae-Soon; Lee, Jong-Chul; Kim, Il-Doo |
| 2008-09 | Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO4 TFT Fabricated on Plastic Substrates | Kim, Dong Hun; Cho, Nam Gyu; Han, Seung Ho; Kim, Ho-Gi; Kim, Il-Doo |
| 2006-12 | Tunable band-pass filter using interdigital capacitor by barium strontium titanate (BST) thin films | Yun, Tae-Soon; Nam, Hee; Yoon, Ki-Chul; Lee, Jong-Chul; Kim, Hyun-Suk; Hyun, Tae-Seon; Kim, Ho-Gi; Kim, Il-Doo; Kim, Ki-Byoung |
| 2010-03-01 | Zinc oxide thin film transistors using MgO-Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate | Cho, Nam Gyu; Kim, Dong Hun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo |
