| 2023-08 | Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance | Ryu, Seung Ho; Jeon, Jihoon; Park, Gwang Min; Kim, Taikyu; Eom, Taeyong; Chung, Taek-Mo; Baek, In-Hwan; Kim, Seong Keun |
| 2024-04 | Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer | Choi, Cheol Hee; Kim, Taikyu; Kim, Min Jae; Kim, Gwang-Bok; Oh, Jeong Eun; Jeong, Jae Kyeong |
| 2023-07 | Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors | Kim, Gwang-Bok; Kim, Taikyu; Choi, Cheol Hee; Chung, Sang Won; Jeong, Jae Kyeong |
| 2024-04 | High-Temperature Atomic Layer Deposition of Rutile TiO2 Films on RuO2 Substrates: Interfacial Reactions and Dielectric Performance | Jeon, Jihoon; Kim, Taikyu; Jang, Myoungsu; Chung, Hong Keun; Kim, Sung-Chul; Won, Sung Ok; Park, Yongjoo; Choi, Byung Joon; Chung, Yoon Jang; Kim, Seong Keun |
