| 1997-09 | C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices | Lee, H.N.; Shin, D.S.; Kim, Y.T.; Choh, S.H. |
| 1999-11 | Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors | Lee, H.N.; Shin, D.S.; Kim, Y.T.; Choh, S.H. |
| 2005-12 | Effects of excess bismuth on the electrical properties of Bi 3.15Nd 0.85Ti 3O 12 thin films | Kim, I.S.; Shim, S.I.; Kim, Y.T.; Kim, Y.-H.; Hong, S.-K.; Lee, C.W. |
| 1996-01 | Effects of non-stoichiometric RuOx thin films on the dielectric properties of BaTiO3 thin films | Kim, Y.T.; Lee, C.W. |
| 2006-10 | Electrical characteristics of nano-crystal Si particles for nano floating gate memory | Yang, J.S.; Kim, S.-I.; Park, J.H.; Cho, W.J.; Kim, Y.T. |
| 1995-01 | High temperature thermal stability of plasma-deposited tungsten nitride Schottky contacts to GaAs | Lee, C.W.; Kim, Y.T. |
| 1991-01 | Highly conductive tungsten thin films prepared by the plasma-assisted silane reduction process | Kim, Y.T.; Min, S.-K.; Hong, Jong Sung; Kim, C.-K. |
| 2006-06 | Inner trench type tungsten nano dot arrays patterned by using diblock copolymer templates and selective ion etching | Kang, G.B.; Kim, S.-I.; Kim, Y.H.; Park, M.C.; Kim, Y.T.; Lee, C.W. |
| 1999-05 | N2+ implantation approaches for improving thermal stability of Cu/Mo/Si contact structure | Kim, Y.T.; Kim, D.J.; Park, J.-W. |
| 1991-01 | New insights on the effect of hydrogen to tungsten hexafluoride partial pressure ratio on plasma deposited tungsten thin films | Kim, Y.T.; Hong, J.S.; Min, S.-K. |
| 2015-05 | Special memory mechanisms in SOI devices | Cristoloveanu, S.; Bawedin, M.; Navarro, C.; Chang, S.-J.; Wan, J.; Andrieu, F.; Le, Royer C.; Rodriguez, N.; Gamiz, F.; Zaslavsky, A.; Kim, Y.T. |
| 1992-01 | The effect of diluent gas and rapid thermal annealing on the properties of plasma-deposited silicon nitride films | Nam, C.W.; Woo, S.I.; Kim, Y.T.; Min, S.-K. |
