| 1994-06-15 | 2-TEMPERATURE TECHNIQUE FOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION GROWTH OF SILICON-NITRIDE ON INP | HER, J; LIM, H; KIM, CH; HAN, IK; LEE, JI; KANG, KN; KIM, JE; PARK, HY |
| 1993-03 | CONSTANT CAPACITANCE TECHNIQUE TO STUDY ELECTRICAL INSTABILITIES IN INP MIS PROVIDED BY PECVD SILICON-NITRIDE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; PARK, HL; LIM, H |
| 1993-01-15 | DEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRICAL INSTABILITY IN AN INP METAL-INSULATOR SEMICONDUCTOR CAPACITOR PROVIDED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE | LEE, MB; HAN, IK; LEE, YJ; LEE, JI; KANG, KN; LIM, H |
| 1994-04-15 | EFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION | KIM, CH; HAN, IK; LEE, JI; KANG, KN; KWON, SD; CHOE, B; PARK, HL; HER, J; LIM, H |
| 1992-01-15 | GROWTH OF CDTE EPITAXIAL-FILMS ON PARA-INSB(111) BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION | KIM, TW; KOO, BJ; JUNG, M; KIM, SB; PARK, HL; LIM, H; LEE, JI; KANG, KN |
| 1992-10 | INTERFACE CONSTRAINTS IN INP MIS STRUCTURES | KIM, CH; CHOE, B; LIM, H; LEE, JI; KANG, KN |
| 1991-06-01 | INTERFACE PROPERTIES AND CAPACITANCE-VOLTAGE BEHAVIOR OF INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR PREPARED BY PLASMA-ASSISTED OXIDATION | LIM, H; BAGLIO, JA; DECOLA, N; PARK, HL; LEE, JI; KANG, KN |
| 1992-11-15 | STUDY OF CHARGE TRAPPING INSTABILITIES IN A SILICON-NITRIDE INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE CONSTANT-CAPACITANCE METHOD | KIM, CH; CHOE, BD; LIM, H; HAN, IK; LEE, JI; KANG, KN |
| 1993-10 | STUDY ON THE LOW-FIELD CHARGE-TRAPPING PHENOMENA IN THE SILICON-NITRIDE INP STRUCTURE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; HER, J; LIM, H |
| 1993-07-01 | THE INTERFACIAL LAYER FORMATION OF THE AL2O3/SI STRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, TW; KANG, WN; YOON, YS; YOM, SS; LEE, JY; KIM, CY; LIM, H; PARK, HL |
