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DEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRICAL INSTABILITY IN AN INP METAL-INSULATOR SEMICONDUCTOR CAPACITOR PROVIDED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE

Authors

LEE, MB; HAN, IK; LEE, YJ; LEE, JI; KANG, KN; LIM, H

Issue Date

1993-01-15

Publisher

CHAPMAN HALL LTD

Citation

JOURNAL OF MATERIALS SCIENCE LETTERS, v.12, no.2, pp.90 - 91

Keywords

FIELD-EFFECT TRANSISTORS; INTERFACE; TRAPS; FIELD-EFFECT TRANSISTORS; INTERFACE; TRAPS

ISSN

0261-8028

URI

https://pubs.kist.re.kr/handle/201004/146122

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KIST Article > Others

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