| 1997-01 | A short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer | Kim, TG; Park, KH; Kim, EK; Min, SK; Park, JH |
| 2005-11 | A simple electrosynthesis route for preparation of nanocrystalline titanium sulphide film | Lokhande, CD; Min, SK; Jung, KD; Joo, OS |
| 1997-11 | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK |
| 2004-11-01 | Cathodic electrodeposition of amorphous titanium oxide films from an alkaline solution bath | Lokhande, CD; Min, SK; Jung, KD; Joo, OS |
| 2005-01-15 | Cathodic electrodeposition of amorphous titanium oxide films from an alkaline solution bath | Lokhande, CD; Min, SK; Jung, KD; Joo, OS |
| 1998-11 | Characteristics of GaN micro-crystals synthesized by the direct reaction of NH3 with Ga-melt | Park, YJ; Son, MH; Kim, EK; Min, SK |
| 1997-06 | Characterization of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance | Park, YJ; Kim, EK; Min, SK; Park, IW; Yeom, TH; Munekata, H; Kukimoto, H |
| 1996-06 | Characterization of the oxidized indium thin films with thermal oxidation | Lee, MS; Choi, WC; Kim, EK; Kim, CK; Min, SK |
| 1998-02 | Comparison between TiO2 thin films on InP and GaAs substrates by metalorganic chemical vapor deposition | HAN YOUNG KI; Lee, TG; Yom, SS; SON MAENG HO; Kim, EK; Min, SK; Lee, JY |
| 1997-01 | Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property | Park, YJ; Yeom, TH; Park, IW; Choh, SH; Min, SK |
| 1996-08-05 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | Kim, SI; Kim, MS; Kim, Y; Son, CS; Hwang, SM; Min, BD; Kim, EK; Min, SK |
| 1997-08-01 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Kim, Y; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 1997-10 | Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | Son, SC; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-06 | Design and fabrication of a narrow stripe GaAs/AlGaAs quantum wire laser | Kim, TG; Kim, EK; Min, SK; Jeon, JI; Jeon, SJ; Park, JH |
| 1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1997-06-02 | Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition | Choi, WC; Kim, EK; Min, SK; Park, CY; Kim, JH; Seong, TY |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 1996-05 | Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs | Son, CS; Kim, SI; Kim, TG; Kim, Y; Kim, MS; Min, SK |
| 1998-12 | Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots | Cho, S; Hyon, CK; Kim, EK; Min, SK |
| 1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2006-02 | Electrosynthesis of molybdenum oxide thin films onto stainless substrates | Pathan, HM; Min, SK; Jung, KD; Joo, OS |
| 1998-04-15 | Enhancement of selective chemical vapor deposition of copper by nitrogen plasma pretreatment | Kim, YS; Kim, DJ; Kwak, SK; Kim, EK; Min, SK; Jung, DG |
| 1995-12 | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl4 | Kim, MS; Kim, Y; Kim, SI; Hwang, SM; Kang, JM; Park, YK; Min, SK |
| 1998-01-08 | Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition | Kim, TG; Son, CS; Hwang, SM; Kim, EK; Min, SK; Leem, SJ; Park, JH |
| 1997-03 | Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Jeon, JI; Leem, SJ; Jeong, J; Park, JH |
| 1997-09 | First-principles calculation of the phonon dispersion curves of silicon | Park, YK; Min, SK |
