Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition
- Authors
- Kim, TG; Son, CS; Hwang, SM; Kim, EK; Min, SK; Leem, SJ; Park, JH
- Issue Date
- 1998-01-08
- Publisher
- IEE-INST ELEC ENG
- Citation
- ELECTRONICS LETTERS, v.34, no.1, pp.85 - 87
- Abstract
- GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250 mu m long uncoated cavity.
- Keywords
- LATERAL GROWTH-RATE; GAAS; LATERAL GROWTH-RATE; GAAS
- ISSN
- 0013-5194
- URI
- https://pubs.kist.re.kr/handle/201004/143291
- DOI
- 10.1049/el:19980084
- Appears in Collections:
- KIST Article > Others
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