Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

Authors
Kim, TGSon, CSHwang, SMKim, EKMin, SKLeem, SJPark, JH
Issue Date
1998-01-08
Publisher
IEE-INST ELEC ENG
Citation
ELECTRONICS LETTERS, v.34, no.1, pp.85 - 87
Abstract
GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250 mu m long uncoated cavity.
Keywords
LATERAL GROWTH-RATE; GAAS; LATERAL GROWTH-RATE; GAAS
ISSN
0013-5194
URI
https://pubs.kist.re.kr/handle/201004/143291
DOI
10.1049/el:19980084
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KIST Article > Others
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