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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
-A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5Lee Suyoun; Jeong, Doo Seok; Jeung-hyun Jeong; Wu Zhe; Park Young-wook; Hyung-Woo Ahn; CHEONG, BYUNG KI
-Characteristics of phase change memory devices based on Ge-doped SbTe and its derivativeCHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook
-Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic ProgrammingLee Suyoun; Jeung-hyun Jeong; Park Young-wook; Wu Zhe; LEE, TAEK SUNG; CHEONG, BYUNG KI
-The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTePark Young-wook; Lee Hyun Seok; Hyung-Woo Ahn; Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kyung-woo Yi; CHEONG, BYUNG KI
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