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The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe

Authors

Park Young-wook; Lee Hyun Seok; Hyung-Woo Ahn; Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kyung-woo Yi; CHEONG, BYUNG KI

Citation

Materials Research Society

Keywords

chalcogenide; GST; PRAM

URI

https://pubs.kist.re.kr/handle/201004/100387

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KIST Conference Paper > Others

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