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Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming

Other Titles

상변화메모리의 쓰기/지우기 반복에 따른 열화현상의 원인에 대한 연구

Authors

Lee Suyoun; Jeung-hyun Jeong; Park Young-wook; Wu Zhe; LEE, TAEK SUNG; CHEONG, BYUNG KI

Citation

Proceedings of European Phase Change and Ovonic Symposium, pp.188 - 193

Keywords

phase change memory; reliability; field-induced ion migration; electromigration

URI

https://pubs.kist.re.kr/handle/201004/101774

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KIST Conference Paper > Others

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