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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
-Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer.W. J. Choi; Lee Seok; D. Woo; Lee Jung Il; S. K. Kim; J. H. Chu; S. K. Yu; KANG KWANG NHAM; D. Kim; K. Cho
-Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.KANG KWANG NHAM; KIM HWE JONG; W. J. Choi; Lee Seok; D. Woo; Han Il Ki; S. K. Kim; S. H. Kim; Lee Jung Il
1995-01Plasma effect in dielectric cap quantum well disordering using plasma enhanced chemical vapor deposited SiN capping layer.이석; W. J. Choi; J. Zhang; 김용; S. K. Kim; 이정일; 강광남; K. Cho
-Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer.KANG KWANG NHAM; W. J. Choi; S. Lee; Y. Kim; Lee Jung Il; S. K. Kim
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