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Plasma effect in dielectric cap quantum well disordering using plasma enhanced chemical vapor deposited SiN capping layer.

Authors

이석; W. J. Choi; J. Zhang; 김용; S. K. Kim; 이정일; 강광남; K. Cho

Issue Date

1995-01

Citation

Japanese journal of applied physics, v.v. 34, pp.L418 - ?

Keywords

quantum well disordering

URI

https://pubs.kist.re.kr/handle/201004/145221

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KIST Article > Others

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