| - | Characteristics of Single Transistor type Ferroelectric Memory Using Pt/SrBi2Ta2O9/Si and Pt/SrBi2Ta2O9/Y2O3/Si Gate Structure | Kim, Yong Tae; SHIN, SUN IL; Jung Ho Park; Kim, Seong Il; Kwon Young Suk |
| - | Circuit Design and Full Chip Simulation for Single Transistor Type Ferroelectric Random Access Memory | Kim, Seong Il; Kim, Yong Tae; Kim, Young Hwan; SHIN, SUN IL; Jung Ho Park |
| - | Development of Etch Stop Process by Using Selective Dry Etching of SrBi2Ta2O9/Y2O3 | SHIN, SUN IL; Kwon Young Suk; Kim, Seong Il; Kim, Yong Tae; Jung Ho Park |
| - | Etch stop Process of SrBi2Ta2O9 thin film using CeO2 buffer layer for self aligned ferroelectric gate structure | Kwon Young Suk; SHIN, SUN IL; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; In-Hoon Choi |
| - | Multibit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
| - | Reduction of phase changing voltage in Phase change random access memory by using edge contact structure | Kim, Yong Tae; Minsoo Youm; SHIN, SUN IL; Kim, Seong Il |
| - | Single transistor type ferroelectric memory with Pt/SrBi2Ta2O9/Pt/CeO2/Si MFMIS gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
| - | Sol-gel derived Bi4-xNdxTi3O12 Bi-layered perovskite ferroelectric thin films | KIM IK SOO; Young Mi Kim; In-Hoon Choi; Woo Sik Kim; SHIN, SUN IL; Kim, Yong Tae; Kim, Young Hwan |
