Characteristics of Single Transistor type Ferroelectric Memory Using Pt/SrBi2Ta2O9/Si and Pt/SrBi2Ta2O9/Y2O3/Si Gate Structure

Authors
Kim, Yong TaeSHIN, SUN ILJung Ho ParkKim, Seong IlKwon Young Suk
Citation
International Conference on Electroceramics
URI
https://pubs.kist.re.kr/handle/201004/105564
Appears in Collections:
KIST Conference Paper > Others
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