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Showing results 1 to 6 of 6

Issue DateTitleAuthor(s)
2004-08Fabrication of MFISFETs with Pt/SrBi2Ta2O9/Y2O3/Si gate structure by developing an etch-stop processShim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH
2005-09Fabrication of Pt/Sr2Bi2Ta2O9/Y2O3/Si FET and sub-circuit model for full memory chip designShim, SI; Kim, IS; Park, MC; Kim, YT; Kim, SI; Lee, CW
2001-03InP/InGaAsP multiple quantum well multimode interference couplerShim, SI; Kim, KT; Kim, KM; Kim, HD; Kim, SE; Park, JH; Woo, DH
2005-03Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching processShim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH
2004-10-28Operation of single transistor type ferroelectric random access memoryShim, SI; Kim, S; Kim, YT; Park, JH
2004-12Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate materialChang, HJ; Suh, KM; Park, JH; Gong, SC; Shim, SI; Kim, YT; Son, CS
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