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Showing results 1 to 11 of 11

Issue DateTitleAuthor(s)
-Active and passive element modeling for MMIC, talking process conditions into account.KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Kim Seong Il; S. H. Hong
-DC & RF characteristics of sub-micron microwave devices.KANG KWANG NHAM; Yoo Jong Lee; 김동명; 전성민
-DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG
-Fabrication and characterization of high speed InP-MSM photodetectors.KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN
-Gate voltage dependence parasitic resistence in LDD MOSFETs.KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki
-Growth and characteristics of AlGaAs/GaAs multi quantum well on SiSung-Jun Park; Lim Ju Young; Oh hyun jee; Kim Min Tae; SONG, JIN-DONG; Jae Min Myuong; Yoo Jong Lee; Choi, Won Jun
-Insulating layer grown by PECVD for InP MISFET.KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Yoo Jong Lee; LEE MYOUNG BOG; 조준환
-Modeling of fixed type passive elements for ultra-high frequency IC design up to 18GHz.KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; 홍성훈; 김봉열
-Mutiple quantum-well device structures for smart pixel applicationYoo Jong Lee; KIM HWE JONG; 김종우; DereK L. Lile
-Reduction of saturated transconductance in LDD MOSFETs.KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee
-RIE 로 처리된 GaAs 표면의 전기적 특성연구 .Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG
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