| - | A new atomic layer deposition method and electrical performance of WN
diffusion barrier for Cu nano via contact structures | Kim, Young-Hwan; Yeong-Hyeon Hwang; Won-Ju Cho; Kim, Yong Tae |
| 2003-10 | A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect | Sim, HS; Kim, SI; Jeon, H; Kim, YT |
| 2005-06 | An approach to durable PVDF cantilevers with highly conducting PEDOT/PSS (DMSO) electrodes | Lee, CS; Joo, J; Han, S; Koh, SK |
| - | Characteristics of amorphous Ta-Si-N thin film for Cu metallization | 김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완 |
| - | Characteristics of molybdenum nitride thin film by N2+ ion implantation | 김동준; 김익수; Kim Yong Tae; 박종완 |
| - | Characteristics of W-C-N thin film as a new diffusion barrier for Cu interconnection | Chang Woo Lee; Kim, Yong Tae; Park Ji Ho; Hee Joon Kim |
| 2002-01 | Comparison of TiN and TiAlN as a diffusion barrier deposited by atomic layer deposition | Kim, JY; Kim, HK; Kim, Y; Kim, YD; Kim, WM; Jeon, H |
| - | Effects of boron implantation on the structural and diffusion barrier properties of W-N thin film | PARK YOUNG KYUN; Kim Yong Tae; 김동준; 박종완 |
| - | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier | Kim, Yong Tae; Chang Woo Lee |
| - | Effects PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect | Kim Yong Tae; 김동준; 이석형; PARK YOUNG KYUN; 김익수; 박종완 |
| - | Electromigration test of a new Cu/WN/MSQ/Si interconnect structure | Kim, Yong Tae; Kim, Young-Hwan; Kim, Seong Il |
| 2023-07 | Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier | Kim, Min-Su; Hwang, Seong-Hyun; Kim, Seung-Hwan; Kim, Jong-Hyun; Park, Euyjin; Han, Kyu-Hyun; Yu, Hyun-Yong |
| - | Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation | 김동준; Kim Yong Tae; PARK YOUNG KYUN; 심현상; 박종완 |
| 2001-03 | Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film | Kim, DJ; Sim, HS; Lee, S; Kim, YT; Kim, SI; Park, JW |
| 2013-10 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization | Hwang, Yeong-Hyeon; Cho, Won-Ju; Kim, Yongtae |
| 2021-06 | Large-Area Bernal-Stacked Bilayer Graphene Film on a Uniformly Rough Cu Surface via Chemical Vapor Deposition | Son, Myungwoo; Jang, Jaewon; Kim, Gi-Hwan; Lee, Ji-Hwan; Chun, Dong Won; Bae, Jee Hwan; Kim, In S.; Ham, Moon-Ho; Chee, Sang-Soo |
| 2002-11 | Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3 | Kim, HK; Kim, JY; Park, JY; Kim, Y; Kim, YD; Jeon, H; Kim, WM |
| 1997-05 | Mo- 화합물의 확산방지막으로서의 성질에 관한 연구 | 김지형; 이용혁; 권용성; 염근영; 송종한 |
| 1997-11-15 | Nanostructured Ta-Si-N diffusion barriers for Cu metallization | Kim, DJ; Kim, YT; Park, JW |
| 1999-07 | New method to prepare W-B+-N ternary barrier to Cu diffusion by implanting BF2+ ions into W-N thin film | Kim, DJ; Kim, YT; Park, JW |
| 1998-01 | RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices | 이창우; 고민경; 오환원; 우상록; 윤성로; 김용태; 박영균; 고석중 |
| - | Stress evolution and diffusion barrier performance of La0.67Sr0.33MnO3 (LSMO)/WCN/Si structure | Chang Woo Lee; Kim, Yong Tae; Akihiro Wakahara; KIM Hee Joon |
| 2000-09 | Thermal stability of tungsten-boron-nitride thin film as diffusion barrier | Park, YK; Kim, SI; Kim, YT; Lee, CW |
