| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2001-02-12 | Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition | Kim, Y; Park, KH; Chung, TH; Bark, HJ; Yi, JY; Choi, WC; Kim, EK; Lee, JW; Lee, JY |
| 2001-09-14 | Direct nanowiring of carbon nanotubes for highly integrated electronic and spintronic devices | Lee, YH; Jang, YT; Choi, CH; Kim, DH; Lee, CW; Lee, JE; Han, YS; Yoon, SS; Shin, JK; Kim, ST; Kim, EK; Ju, BK |
| 2001-05-21 | Fabrication of wirelike InAs quantum dots on 2 degrees-off GaAs (100) substrates by changing the thickness of the InAs layer | Kim, HJ; Park, YJ; Park, YM; Kim, EK; Kim, TW |
| 2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
| 2001-09-01 | Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation | Lee, H; Kim, SM; Park, YJ; Kim, EK |
| 2001-09 | Patterned formation of InAs QDs for single-electron device applications | Son, MH; Choi, BH; Hwang, SW; Ahn, D; Hyon, CK; Kim, EK; Kim, Y; Lim, JS |
| 2001-07 | Nano mold lithography for 40-nm patterns | Park, CM; Choi, BH; Hyon, CK; Hwang, SW; Ahn, D; Kim, EK |
| 2001-07 | Influence of growth conditions on the formation and the optical properties of self-assembled InAs quantum dots on (001)GaAs | Nah, J; Park, SH; Kim, KM; Park, YJ; Hyon, CK; Kim, EK |
