| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2004-08 | Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure | Heo, D; Han, IK; Lee, JI; Jeong, J |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-09-13 | Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates | Kim, YG; Joh, YS; Song, JH; Sim, ED; Baek, KS; Chang, SK; Lee, JI |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | Lee, CM; Choi, SH; Kim, CS; Noh, SK; Lee, JI; Lim, KY; Han, IK |
| 2004-12 | Spatially-resolved optical studies on intermixing of InGaAs quantum-dot laser structures by using an AlAs native oxide and thermal annealing | Kwon, BJ; Hwang, JS; Cho, YH; Cho, NK; Jeon, HS; Song, JD; Choi, WJ; Lee, JI; Rho, H |
| 2004-11 | Study on superluminescent diodes using InGaAs-InAs chirped quantum dots | Han, IK; Heo, DC; Song, JD; Lee, JI |
| 2004-09 | Dependence of the intermixing in InGaAs/InGaAsP quantum well on capping layers | Choi, WJ; Yi, HT; Lee, JI; Woo, DH |
| 2004-07 | Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
