| 2004-10 | Optical properties of ZnO nanocrystals synthesized by using sol-gel method | Chang, HJ; Lu, CZ; Wang, YS; Son, CS; Kim, SI; Kim, YH; Choi, IH |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | Lee, CM; Choi, SH; Kim, CS; Noh, SK; Lee, JI; Lim, KY; Han, IK |
| 2004-06 | Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN | Yoshida, A; Wakahara, A; Nakanishi, Y; Okada, H; Ohshima, T; Itoh, H; Kim, YT |
| 2004-09 | Bubble evolution and radiation mechanism for laser-induced collapsing bubble in water | Byun, KT; Kwak, HY; Karng, SW |
| 2004-06-30 | The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films | Son, JH; Kim, HB; Whang, CN; Chae, KH |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2004-12 | Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution | Lee, CM; Choi, SH; Seo, JC; Lee, JI; Leem, JY; Han, IK |
| 2004-11-15 | Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI; Yoo, KH; Kim, HS; Park, CG |
| 2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
