| 2006-11 | Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure | Kim, J. S.; Kim, E. K.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2006-05 | Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources | Song, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T. |
| 2006-09 | Low-frequency noise in high-k gate dielectric nanoscale MOSFETs | Han, I. K.; Nam, H. D.; Choi, W. J.; Lee, J. I.; Szentpali, B.; Chovet, A. |
| 2006-06 | Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
| 2006-05 | Gate bias controlled NDR in an in-plane-gate quantum dot transistor | Son, S. H.; Choi, Y. S.; Hwang, S. W.; Lee, J. I.; Park, Y. J.; Yu, Y. S.; Ahn, D. |
| 2006-08 | Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure | Jung, I. Y.; Park, Y. M.; Park, Y. J.; Lee, J. I.; Kim, T. W. |
| 2006-08 | Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes | Lim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S. |
| 2006-10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots | Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A. |
