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Improvement of bias stability of indium zinc oxide TFTs by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

Authors

Chong Eu Gene; Jo Kyoungchul; Kim Seung Han; Chun Yoon Soo; Lee Sang Yeol

Citation

APCPST 2010

Keywords

oxygen partial pressure; hafnium-doped; indium zinc oxide; bias-stability; Hf

URI

https://pubs.kist.re.kr/handle/201004/100177

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KIST Conference Paper > Others

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