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Characteristics of Cu/PPALD (pulse-plasma atomic layer deposited) WN/methyl silsequioxane/Si for multi-level Cu interconnection

Authors

Chang Woo Lee; Kim, Yong Tae

Citation

The international conference on electrical engineering 2005 (ICEE2005)

Keywords

pulse plasma; WN

URI

https://pubs.kist.re.kr/handle/201004/104772

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KIST Conference Paper > Others

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