Depending on Polishing Conditions of GaAs/Si3N4/SiO2/Si Wafers to Compare with Bonding Forces

Other Titles
연마 조건에 따른 GaAs/Si3N4/SiO2/Si 웨이퍼의 접합력 비교
Authors
PARK JONG KOOKKim, Sun HoJin Woo ParkByun, Young Tae
Citation
한국광학회 2005년도 하계학술발표회, pp.46 - 47
Keywords
연마; GaAs/Si3N4/SiO2/Si; 웨이퍼의 접합력
URI
https://pubs.kist.re.kr/handle/201004/104810
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE