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Sub-bandgap photonic characterization of the gate leakage in pseudomorphic high-electron mobility transistors

Authors

Dong Myong Kim; Lee, Jung Il; Hwe-Jong Kim

Citation

The First International Symposium on Future Issues in Nano-optoelectronics, pp.40 - 41

Keywords

Photo-response; Gate leakage; High-electron mobility transistors

URI

https://pubs.kist.re.kr/handle/201004/105986

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KIST Conference Paper > Others

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