Single electron tunneling effects in a heavily doped n+ GaAs quantum dot

Authors
B.H.ChoiS.H.SonK.H.ChoS.W.HwangD.AhnY.M.ParkPark Young JuE.K.Kim
Citation
26th International conference on physcis of semiconductor, pp.247
URI
https://pubs.kist.re.kr/handle/201004/106758
Appears in Collections:
KIST Conference Paper > Others
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