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A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment

Authors

심현상; Kim Yong Tae; 김동준; 전형탁; 추상현; 차국현

Citation

Material Research Society (MRS) 2001 spring Meeting, pp.231.

Keywords

low-k

URI

https://pubs.kist.re.kr/handle/201004/107795

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KIST Conference Paper > Others

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