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Fabrication of in-plane gated transistor with electron-beam lighography technique

Authors

한철구; 김광무; 정석구; 최범호; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO

Citation

Proc. 4th Korean conf. semiconductors., pp.437 - 438

Keywords

in-plane gated transistor; electron beam lithography; HEMT; MBE

URI

https://pubs.kist.re.kr/handle/201004/110936

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KIST Conference Paper > Others

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