Status and new evaluation method of interfacial oxide between directly-bonded Si wafer pairs

Authors
Ju Byeong KwonLEE YUN HIOH MYUNG HWAN
Citation
IEEE MEMS '96, San Diego, USA., pp.337 - 342
Keywords
wafer bonding; annealing; elemental semiconductors; etching; interface structure; materials testing; semiconductor-insulator boundaries; silicon; wafer bonding
URI
https://pubs.kist.re.kr/handle/201004/111445
Appears in Collections:
KIST Conference Paper > Others
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