Competitive 1T-DRAM in 28 nm FDSOI Technology for Low-Power Embedded Memory

Abstract

We demonstrate experimentally a capacitorless 1T-DRAM fabricated with 28 nm FDSOI. The Z(2)-FET memory cell features a large current sense margin and long retention time at T = 25 degrees C and 85 degrees C. Systematic measurements show that Z(2)-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.