Electronic-beam evaporation processed titanium oxide as an electron selective contact for silicon solar cells
- Authors
- Matkivskyi, V.; Lee, Y.; Seo, H.S.; Lee, D.-K.; Park, J.-K.; Kim, I.
- Issue Date
- 2021-12
- Publisher
- Elsevier
- Citation
- Current Applied Physics, v.32, pp.98 - 105
- Abstract
- This work is dedicated to the study of electronic-beam (e-beam) evaporated titanium oxide (TiOx) contact for polycrystalline silicon hetero-junction solar cells. A TiOx material obtained by e-beam evaporation method is suggested as a possible alternative to the atomic layer deposition (ALD) process. The purpose is to achieve corresponding passivation efficiency between e-beam evaporation of TiOx and the ALD method. However, the TiOx in question achieved a relatively low passivation performance of Seff = 113 cm?1 in comparison to the reported ALD results. Nonetheless, as e-beam evaporation is well-established and an environmentally friendly deposition technology, e-beam evaporated TiOx passivation layer has potential for improvement. What is clearly demonstrated in our work is how such an improvement in contact resistance dropped from >55 Ω/cm2 to 2.29 Ω/cm2. Indeed, our study established a correlation between the main process parameters of e-beam evaporation and their influence on the quality of electron selective TiOx layer. Moreover, we reveal a possible scenario for the implementation of e-beam evaporated Titanium oxide as electron selective contact for asymmetrical hetero-junction solar cells. ? 2021 The Authors
- Keywords
- Atomic layer deposition; Evaporation; Silicon solar cells; Titanium dioxide; Atomic-layer deposition; Beam evaporation; Carrier selective contact; Deposition methods; Deposition process; Electronic beams; Evaporation method; Oxide materials; Selective contacts; Titania oxides; Passivation; Carrier selective contacts; e-beam; Passivation; Solar cells; TiO2
- ISSN
- 1567-1739
- URI
- https://pubs.kist.re.kr/handle/201004/116002
- DOI
- 10.1016/j.cap.2021.10.005
- Appears in Collections:
- KIST Article > 2021
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