Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor

Authors
Seong, Han-KyuLee, Seung-YongChoi, Heon-JinKim, Tae-HongCho, Nam-KyuNahm, Kee-SukLee, Sang-Kwon
Issue Date
2006
Publisher
TRANS TECH PUBLICATIONS LTD
Citation
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.771 - 774
Abstract
We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several mu m. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm(2)/(VS) for a source-drain voltage (V-SD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.
ISSN
0255-5476
URI
https://pubs.kist.re.kr/handle/201004/116722
DOI
10.4028/www.scientific.net/MSF.527-529.771
Appears in Collections:
KIST Conference Paper > 2006
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