Temperature dependence of the anomalous hall effect in ferromagnetic (Ga,Mn)As epilayers

Authors
Kim, YSChoi, HKKhim, ZGWoo, JCPark, YDChun, SH
Issue Date
2006
Publisher
WILEY-VCH, INC
Citation
32nd International Symposium on Compound Semiconductors, v.3, no.3, pp.697 - +
Abstract
We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
ISSN
1862-6351
URI
https://pubs.kist.re.kr/handle/201004/116723
DOI
10.1002/pssc.200564144
Appears in Collections:
KIST Conference Paper > 2006
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