AB-stacked nanosheet-based hexagonal boron nitride

Authors
Lee, Jae KapKim, Jin GyuHembram, K. P. S. S.Yu, SeunggunLee, Sang Gil
Issue Date
2021-04
Publisher
INT UNION CRYSTALLOGRAPHY
Citation
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, v.77, pp.260 - 265
Abstract
Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (similar to 10-500 nm in thickness) exhibit stacks of parallel nanosheets (similar to 10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2-20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as 'substrate-induced 2D growth', where the substrate plays the role of pressure.
Keywords
HETEROSTRUCTURES; GRAPHENE; HETEROSTRUCTURES; GRAPHENE; hexagonal boron nitride; AB stacking; high-resolution transmission electron microscopy; simulation
ISSN
2052-5206
URI
https://pubs.kist.re.kr/handle/201004/117195
DOI
10.1107/S2052520621000317
Appears in Collections:
KIST Article > 2021
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