Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors
- Authors
- Jeon, Dae-Young; Nam, Deuk Hyeon; Lee, Dong Su; Lee, Seoung-Ki; Park, Min; Park, So Jeong; Kim, Gyu-Tae
- Issue Date
- 2020-07-01
- Publisher
- IOP PUBLISHING LTD
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.27
- Abstract
- Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (I-on/I-off) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the I-on/I-off ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.
- Keywords
- HIGH-PERFORMANCE; HIGH-PERFORMANCE; multi-layer MoS2; field-effect transistors; ionic-liquid; back-gate biasing; on-current to off-current ratio; numerical simulation; analytical equations
- ISSN
- 0022-3727
- URI
- https://pubs.kist.re.kr/handle/201004/118411
- DOI
- 10.1088/1361-6463/ab84a5
- Appears in Collections:
- KIST Article > 2020
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