Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors

Authors
Jeon, Dae-YoungNam, Deuk HyeonLee, Dong SuLee, Seoung-KiPark, MinPark, So JeongKim, Gyu-Tae
Issue Date
2020-07-01
Publisher
IOP PUBLISHING LTD
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.27
Abstract
Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (I-on/I-off) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the I-on/I-off ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.
Keywords
HIGH-PERFORMANCE; HIGH-PERFORMANCE; multi-layer MoS2; field-effect transistors; ionic-liquid; back-gate biasing; on-current to off-current ratio; numerical simulation; analytical equations
ISSN
0022-3727
URI
https://pubs.kist.re.kr/handle/201004/118411
DOI
10.1088/1361-6463/ab84a5
Appears in Collections:
KIST Article > 2020
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