Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors
- Authors
- Jeon, Dae-Young; Lee, Dong Su; Lee, Seoung-Ki; Park, Min; Park, So Jeong; Kim, Gyu-Tae
- Issue Date
- 2018-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3050 - 3053
- Abstract
- Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D-max), and the impact of series resistance (R-sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.
- Keywords
- 2-D transition-metal dichalcogenides (TMDs); bulk channel mobility; maximum depletion width; partially depleted (PD); series resistance
- ISSN
- 0018-9383
- URI
- https://pubs.kist.re.kr/handle/201004/121212
- DOI
- 10.1109/TED.2018.2836345
- Appears in Collections:
- KIST Article > 2018
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