Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors

Authors
Jeon, Dae-YoungLee, Dong SuLee, Seoung-KiPark, MinPark, So JeongKim, Gyu-Tae
Issue Date
2018-07
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3050 - 3053
Abstract
Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D-max), and the impact of series resistance (R-sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.
Keywords
2-D transition-metal dichalcogenides (TMDs); bulk channel mobility; maximum depletion width; partially depleted (PD); series resistance
ISSN
0018-9383
URI
https://pubs.kist.re.kr/handle/201004/121212
DOI
10.1109/TED.2018.2836345
Appears in Collections:
KIST Article > 2018
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