Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

Authors
Soni, RohitPetraru, AdrianNair, Harikrishnan S.Vavra, OndrejZiegler, MartinKim, Seong KeunJeong, Doo SeokKohlstedt, Hermann
Issue Date
2016-05
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.8, no.20, pp.10799 - 10805
Abstract
A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb (Zr0.3Ti0.7)O-3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.
Keywords
ELECTRORESISTANCE; MAGNETORESISTANCE; MECHANISMS; ELECTRORESISTANCE; MAGNETORESISTANCE; MECHANISMS
ISSN
2040-3364
URI
https://pubs.kist.re.kr/handle/201004/124143
DOI
10.1039/c6nr01277a
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KIST Article > 2016
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