Incompletely condensed POSS-based spin-on-glass networks for impeccable ultra low-k integration

Authors
Lee, Albert S.Choi, Seung-SockOh, Sung YeounLee, He SeungKim, BominHwang, Seung SangBaek, Kyung-Youl
Issue Date
2015-11
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.44, pp.11605 - 11611
Abstract
Poly(methyl) silsesquioxane-based spin-on-glass resins incorporating both a cyclic precursor, 1,3,5,7-tetramethyl 1,3,5,7-tetrahydroxyl cyclosiloxane, and incompletely condensed methyl-substituted POSS were synthesized and their thermal, mechanical, and electrical properties were investigated as a function of the POSS loading content. By introducing incompletely condensed methyl-substituted POSS compounds at the molecular level as sol-gel precursors, exceptional thermal stability (4700 degrees C), good mechanical properties (elastic modulus >4.0 GPa), and an ultra-low dielectric constant (k = 1.8) were obtained. In addition to providing a new route towards fully poly(methyl) silsesquioxane-based spin-on-glass resins with the above properties, the realization of the application of integration circuits was evaluated to show that the ultra low-k, mechanically robust spin-on-glass materials were able to withstand harsh wet chemical and dry etching, as well as chemical mechanical planarization (CMP) processing.
Keywords
POLYHEDRAL OLIGOSILSESQUIOXANES; POLYSILSESQUIOXANES; SILSESQUIOXANES; POLYHEDRAL OLIGOSILSESQUIOXANES; POLYSILSESQUIOXANES; SILSESQUIOXANES
ISSN
2050-7526
URI
https://pubs.kist.re.kr/handle/201004/124821
DOI
10.1039/c5tc02683k
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KIST Article > 2015
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