New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr

Authors
Shon, YoonLee, J. W.Lee, D. J.Yoon, I. T.Kwon, Y. H.Kim, H. S.Kang, T. W.Kyhm, J. H.Song, J. D.Koo, H. C.Fu, D. J.Park, C. S.An, H. H.Yoon, Chong S.Kim, E. K.
Issue Date
2014-10
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF LUMINESCENCE, v.154, pp.593 - 596
Abstract
InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved.
Keywords
SEMICONDUCTORS; INP; GAAS; MN; SEMICONDUCTORS; INP; GAAS; MN; Photoluminescence; Cr-implantation; P-type InCrP:Zn
ISSN
0022-2313
URI
https://pubs.kist.re.kr/handle/201004/126310
DOI
10.1016/j.jlumin.2014.06.011
Appears in Collections:
KIST Article > 2014
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