X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

Authors
Chang, Seo HyoungKim, JunghoPhatak, CharudattaD'Aquila, KennethKim, Seong KeunKim, JiyoonSong, Seul JiHwang, Cheol SeongEastman, Jeffrey A.Freeland, John W.Hong, Seungbum
Issue Date
2014-02
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.8, no.2, pp.1584 - 1589
Abstract
The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.
Keywords
MEMRISTIVE DEVICES; MEMRISTIVE DEVICES; resistive switching; X-ray irradiation; photovoltaic effect; Magneli phase; Joule heating; defect generation
ISSN
1936-0851
URI
https://pubs.kist.re.kr/handle/201004/127134
DOI
10.1021/nn405867p
Appears in Collections:
KIST Article > 2014
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